![]() In the future post-5G era, the transistors used in communication devices will be required to support higher power and higher frequencies for an increased volume of data transmission.Ĭonventionally, Ga-polar (0001 orientation) GaN has been widely used. GaN-HEMTs are widely used in high-frequency amplifier applications, including 5G. has developed a gallium nitride transistor (GaN-HEMT*¹) that uses N-polar GaN and, for the gate insulating layer, the world's first hafnium (Hf)-based, highly heat-resistant, high-dielectric material, setting its sights on the post-5G era, which will realize even greater capacity and high-speed communications. ![]()
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